Investigation of Flicker Noise in Silicon Diodes under Reverse Bias
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00190036" target="_blank" >RIV/68407700:21230/12:00190036 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.microrel.2011.10.021" target="_blank" >http://dx.doi.org/10.1016/j.microrel.2011.10.021</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.microrel.2011.10.021" target="_blank" >10.1016/j.microrel.2011.10.021</a>
Alternative languages
Result language
angličtina
Original language name
Investigation of Flicker Noise in Silicon Diodes under Reverse Bias
Original language description
This article analyses some connections between the reverse properties of silicon power diodes and their flicker noise under reverse bias conditions. It is shown that the presence of defects in the silicon surface near the pn-junction termination has a significant influence on both the reverse VA characteristics (RVAC) and the low-frequency power noise of diodes under reverse bias conditions. However, the inherent relationship between both effects becomes apparent only under special conditions and by theuse of sophisticated measurements. The article presents a simple physical model, describing the behaviour and effect of surface structural defects on the silicon surfaces in connection with the reverse and noise properties of the tested diodes. The model identifies and consequently performs the mutual relationships with respect to the physical nature of the investigated defects. The most important practical contribution of this article is to identify a simple way to reveal latent defect
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronics Reliability
ISSN
0026-2714
e-ISSN
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Volume of the periodical
52
Issue of the periodical within the volume
3
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
469-474
UT code for WoS article
000302045400003
EID of the result in the Scopus database
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