VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81699" target="_blank" >RIV/00216305:26220/09:PU81699 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
VA CHARACTERISTICS OF N-CHANNEL CMOS TECHNOLOGY
Original language description
Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift currentcomponent for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GD102%2F09%2FH074" target="_blank" >GD102/09/H074: Diagnostics of material defects using the latest defectoscopic methods</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Sborník příspěvků konference KRÁLÍKY 2009
ISBN
978-80-214-3938-2
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
—
Publisher name
Ing. Martin Slanina, Ph.D.
Place of publication
Brno
Event location
Králíky
Event date
Aug 31, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—