Measurements and Theoretical Approximations of VA Characteristics MOSFETs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU83429" target="_blank" >RIV/00216305:26220/09:PU83429 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Measurements and Theoretical Approximations of VA Characteristics MOSFETs

Original language description

Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift currentcomponent for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Jemná mechanika a optika

ISSN

0447-6441

e-ISSN

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Volume of the periodical

54

Issue of the periodical within the volume

10

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

2

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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