IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81999" target="_blank" >RIV/00216305:26220/09:PU81999 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS
Original language description
Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift currentcomponent for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
Czech name
IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS
Czech description
Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift currentcomponent for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electronic Devices and Systems EDS'09 IMAPS CS International Conference 2009
ISBN
978-80-214-3933-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
NOVPRESS s.r.o.
Place of publication
Nám. Republiky 15 Brno
Event location
Brno
Event date
Sep 2, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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