Detection and localization of defects in monocrystalline silicon solar cell

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU83905" target="_blank" >RIV/00216305:26220/10:PU83905 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Detection and localization of defects in monocrystalline silicon solar cell

Original language description

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the developmentand further evaluation of the technique.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Local optical and electronic characterisation of optoelectronic structures with nanometric resolution</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Advances in Optical Technologies

ISSN

1687-6393

e-ISSN

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Volume of the periodical

2010

Issue of the periodical within the volume

805325

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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