Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU92666" target="_blank" >RIV/00216305:26220/11:PU92666 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Original language description

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GAP102%2F11%2F0995" target="_blank" >GAP102/11/0995: Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Inventi Rapid: Energy & Power

ISSN

2229-7774

e-ISSN

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Volume of the periodical

2011

Issue of the periodical within the volume

2

Country of publishing house

IN - INDIA

Number of pages

4

Pages from-to

1-4

UT code for WoS article

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EID of the result in the Scopus database

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