Noise spectroscopy of high resistance CdTe detectors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87031" target="_blank" >RIV/00216305:26220/10:PU87031 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Noise spectroscopy of high resistance CdTe detectors
Original language description
Previously the analysis of noise characteristics of CdTe single crystals was carried out. For measurements were used CdTe long bars with four contacts, two current and two voltage contacts. The analysis showed that the source of the excess value of 1/f noise spectral density is depleted region of samples at metal-semiconductor junction [1,2]. These samples were high doped and therefore were lowohmic. For increasing production efficiency of both detectors and substrates, the growth of largediameter, inclusion and precipitate-free single crystals with low concentration of native and foreign defects is necessary [3]. This paper presents the noise characteristics of high resistance CdTe radiation detectors. Noise spectroscopy of two CdTe detectors shows that the resulting noise characteristic is given by superposition of 1/f noise and generationrecombination noise.
Czech name
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Czech description
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Project
<a href="/en/project/GPP102%2F10%2FP589" target="_blank" >GPP102/10/P589: Noise spectroscopy of CdTe X-ray and gamma-ray detectors</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
33rd International Spring Seminar on Electronics Technology
ISBN
978-83-7207-874-2
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Piotr Firek
Place of publication
Warsaw
Event location
Kyoto
Event date
Aug 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000272337900005

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