Reverse-biased solar cell light emission thermal dependency
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89131" target="_blank" >RIV/00216305:26220/10:PU89131 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Reverse-biased solar cell light emission thermal dependency
Original language description
We present experimental data of light emission measurement from reverse-biased monocrystalline solar cell samples. Using high sensitivity light detection technique (cooled PMT in photon counting regime), some spots appearing in low reverse voltage Ur = 1.9 V have been found. Thermal dependency of light emission from bulk and edge defects shows different characteristics, respectively. Therefore not all of the light emitting spots in visible range are connected with avalanche multiplication or microplasmas. This measurement proves that all defects in the cell are not of the same nature.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluctuation processes in PN junctions of solar cells</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electronic Devices and Systems EDS10
ISBN
978-80-214-4138-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Novpress
Place of publication
Brno
Event location
Brno
Event date
Sep 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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