Influence of Rapid Thermal Annealing on Silicon Wafers with Swirls

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU92775" target="_blank" >RIV/00216305:26220/10:PU92775 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of Rapid Thermal Annealing on Silicon Wafers with Swirls
Original language description
We can use Rapid Thermal Annealing (RTA) for silicon wafers treatment to achieve better bulk properties. Rapid change of temperature has specific influence on different wafers behavior in RTP technology in the contrast to the standard heating technology.Rapid temperature change can be followed besides positive effects by creation of stresses and defects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrierlifetime and with swirls. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing. The influence of key RTP parameterson minority carrier lifetime was investigated. These parameters are maximum temperature, rate of ramp up/down temperature and plateau time. The influence RTP parameters was investigated with the aid of factor analyse. The maximum annealing temperature is the key parameter for high minority carrier lifetime.
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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