CONDUCTION MECHANISIM IN THIN ISULATOR FILM IN METAL-INSULATOR-SEMICONDUCTOR CAPACITOR
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU94307" target="_blank" >RIV/00216305:26220/11:PU94307 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
CONDUCTION MECHANISIM IN THIN ISULATOR FILM IN METAL-INSULATOR-SEMICONDUCTOR CAPACITOR
Original language description
Niobium oxide capacitor 220 uF was investigated by using I-V characteristics. It is shown that the conduction process cannot be electrode limited. The conductivity mechanism is considered to be bulk limited. The dominant electric current transport mechanisms are ohmic and Poole-Frenkel conduction, transport across barriers and tunneling. The value of leakage current depends on the insulator layer structure, its electron affinity and electrode work functions [1] We have observed at low electric field strength E < 1MV/cm that the leakage current has an ohmic component with conductivity of the order S = 10-9 Ohm-1 cm-1 .
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 9th international conference VSACKÝ CÁB 2011
ISBN
978-80-214-4319-8
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
12-15
Publisher name
FEKT VUT Brno
Place of publication
Brno
Event location
Vsetín
Event date
Aug 29, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—