THE SELECTIVE BORON DOPING FROM LIQUID SOURCE BBr3
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU97605" target="_blank" >RIV/00216305:26220/11:PU97605 - isvavai.cz</a>
Alternative codes found
RIV/49610040:_____/11:#0000013
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
THE SELECTIVE BORON DOPING FROM LIQUID SOURCE BBr3
Original language description
The boron diffusion makes pn junction on n-type wafer or BSF (Back Surface Field) for p-type wafer, essential parts of any solar cell. This paper focuses on different options for boron diffusion processes from liquid source BBr3 for p-type diffusion on n-type wafers. There are three options to create selective structure of boron diffusion from liquid source BBr3: masking layers, pre-doping of source wafer or combination. The masking properties of various dielectric barriers were verified by four point probe sheet resistance mapping; also ECV technique was applied for evaluation of boron concentration profile. The first method is based on masking layer deposited on surface. This method is more complex, because the process has many steps (application ofa masking layer, laser structuring or etching paste printing, boron diffusion and finally removal of the masking layer). Two different masking layers (PECVD SiNX or thermal oxide) were tested for this process. Masking layers have differen
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the International Conference held in Hamburg, Germany
ISBN
3-936338-27-2
ISSN
—
e-ISSN
—
Number of pages
4800
Pages from-to
2031-2033
Publisher name
WIP
Place of publication
Hamburg
Event location
Hamburg
Event date
Sep 5, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—