Screen Printed Diffusion Boron Paste
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F06%3A00051424" target="_blank" >RIV/68081731:_____/06:00051424 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Screen Printed Diffusion Boron Paste
Original language description
This paper shows that Boron pastes can make emitter and back surface field (BSF) formation a simple screen print process. It is possible to achieve high quality p+ emitter on n-type silicon wafers. It is shown that bifacial solar cells can easily be fabricated by using n-type silicon wafers and simultaneous diffusion of Boron paste. Diffusion length in excess of 300um is achievable on commercial wafers for solar cell application using screen-printed Boron pastes. These high quality diffusion pastes canreduce manufacturing cost and make it possible to use less than 150 um thick silicon wafers for bifacial solar cell application.
Czech name
Difúzní bórové pasty pro sítotisk
Czech description
Článek se zabývá použitím bórových past v procesu sítotisku. Lze tak dosáhnout vysoce kvalitní p+ vrstvy na n-typu polovodiče vhodném pro solární články.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
EDS'06 - Electronic Devices and Systems IMAPS CS International Conference 2006 - Proceedings
ISBN
80-214-3246-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
244-247
Publisher name
Vysoké učení technické v Brně
Place of publication
Brno
Event location
Brno
Event date
Sep 14, 2006
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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