AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU106136" target="_blank" >RIV/00216305:26220/13:PU106136 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate
Original language description
Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of 8th Solid State Surfaces and Interfaces
ISBN
978-80-223-3501-0
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
33-34
Publisher name
Comenius University
Place of publication
Bratislava
Event location
Snolenice
Event date
Nov 18, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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