Wire-Bonds Durability in High-Temperature Applications

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU107185" target="_blank" >RIV/00216305:26220/13:PU107185 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Wire-Bonds Durability in High-Temperature Applications
Original language description
This work aims to determine the suitability of use of low-temperature co-fired ceramics (LTCC) and thick film technology in applications with semiconductors based on SiC and GaN, which have high operating temperature. Especially, Heraeus HeraLock 2000 substrate is investigated. The paper is mainly focused on the behaviour and reliability of wire-bonds, which are used for connection of the above-mentioned semiconducting devices with a circuit or a package. A test sample was designed for this purpose, which was subjected to thermal load. Subsequently, changes in the bonds resistivity were studied, together with their strength and any defects caused by the thermal load. Other properties, such as termomechanical stress of the material for different temperature profiles were simulated in the ANSYS software. Created mathematical model simulated and compared differences between gold and aluminium wire-bond.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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