SEM and AFM imaging of solar cells defects

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU113088" target="_blank" >RIV/00216305:26220/15:PU113088 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2049046" target="_blank" >http://dx.doi.org/10.1117/12.2049046</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2049046" target="_blank" >10.1117/12.2049046</a>

Result language
angličtina
Original language name
SEM and AFM imaging of solar cells defects
Original language description
The paper deals with the successive localization and imaging of solar cell defects, going from macroscale to microscale. For the purpose of localization, the light emission from reversed bias samples is used. After rough macroscopic localization, microscopic localization by scanning probe microscopy combined with a photomultiplier (shadow mapping) is performed. The type of microscopic defects are discernable from their current-voltage plot or from noise measurements. Two specific defects, both of the avalanche type, with different voltage threshold, are presented in this paper. Current voltage plots and radiant flux versus voltage characteristics for two temperatures, topography, shadow map and corresponding SEM micrographs are shown for both samples.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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