1 kW LLC Resonant Converter with HV GaN Switches

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU115951" target="_blank" >RIV/00216305:26220/15:PU115951 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817" target="_blank" >http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
1 kW LLC Resonant Converter with HV GaN Switches
Original language description
Properties of the new high voltage (650 V) GaN HEMT cascodes are presented and compared with those of their silicon counterparts. The short switching times, low Qg and Coss along with low RDSon of GaN HEMTs make them ideal for high frequency DC/DC conversion. A 1kW, 400 V to 48 V LLC resonant DC/DC converter design is described and various design constraints are discussed. Presented waveforms and efficiency measurements prove the GaN HEMTs are the devices of choice for new high efficiency and power density designs.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
ISBN
978-3-8007-3924-0
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
1-7
Publisher name
VDE
Place of publication
Norimberk, DE
Event location
Nurnberg
Event date
May 19, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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