Preparation and measurement of GaN based HEMT structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00485338" target="_blank" >RIV/68378271:_____/17:00485338 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Preparation and measurement of GaN based HEMT structures
Original language description
GaN based HEMT structures exhibit better parameters than Si based transistor structures. The most important are GaN based HEMT in high power and high frequency application. Structures were grown by MOVPE in AIXTRON apparatus on Si substrates. Resistance measurement on the buffer with contact distance 20µm exhibited current ≈ 10-11. We evaluated the uniformity of heterostructure grown on silicon substrate by evaluation of transistor properties on the base of dc parameters measurement. The uniformity of heterostructure growth, especially on silicon substrate is very challenging and need to be improve if GaN-based devices have to be start in serial production.n
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V
ISBN
978-80-2234411-1
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
56-57
Publisher name
Comenius University
Place of publication
Bratislava
Event location
Florence
Event date
Nov 20, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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