MOVPE GaN/AlGaN HEMT nano-structures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522076" target="_blank" >RIV/68378271:_____/19:00522076 - isvavai.cz</a>

Alternative codes found

RIV/00216224:14740/19:00108444

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

MOVPE GaN/AlGaN HEMT nano-structures

Original language description

GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.n

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./

ISBN

978-80-87294-89-5

ISSN

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e-ISSN

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Number of pages

5

Pages from-to

30-35

Publisher name

Tanger Ltd.

Place of publication

Ostrava

Event location

Brno

Event date

Oct 17, 2018

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

000513131900004