Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU116293" target="_blank" >RIV/00216305:26220/15:PU116293 - isvavai.cz</a>

Result on the web

<a href="http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf" target="_blank" >http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Original language description

This paper deals with deposition of aluminum nitride layer on different underlayers namely silicon (100), amorphous thermal silicon dioxide, and titanium (001). The aluminum nitride layer was deposited using 3-grid radio frequency inductive coupled plasma (RFICP) Kaufman ion-beam source which provides slow deposition rate with low energy of plasma ions. This possibility leads to high homogeneity and very smooth surface. Titanium layer was deposited by argon plasma at low energy of 200 eV to attain the highly oriented c-axis layer. The aluminum nitride was sputtered on substrate which was heated to 350 °C. The nitrogen plasma only at energy of 500 eV was used. It was observed the aluminum nitride deposited on thermal silicon dioxide has the highest root mean square of roughness (RRMS) = 1.49 nm and the lowest intensity of X-ray diffraction in Bragg-Brentano focusing geometry (XRD–BB). The aluminum nitride deposited on silicon (100) shows higher intensity of XRD–BB and the lowest RRMS = 0.48 nm. Although the RRMS = 0.66 nm of aluminum nitride thin film deposited on titanium (001) underlayer was obtained, the highest intensity of XRD– BB was observed. Azimuthally averaged intensity of pole figures obtained using parallel beam setup represents the information about misorientation of individual crystallites. These analyses were performed for aluminum nitride layers deposited on titanium (001) film and silicon (100) wafer. Misorientation determined from full width at half maximum (FWHM) of the pole figures was of about 0.5° lower for aluminum nitride thin film deposited on titanium underlayer than one deposited directly on silicon substrate without silicon dioxide.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of 7 th International conference Nanocon 2015

ISBN

978-80-87294-59-8

ISSN

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e-ISSN

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Number of pages

5

Pages from-to

89-93

Publisher name

Tanger

Place of publication

Ostrava

Event location

Brno

Event date

Oct 14, 2015

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000374708800014