Isolation and optoelectronic characterization of Si solar cells microstructure defects
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU130447" target="_blank" >RIV/00216305:26220/18:PU130447 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009" target="_blank" >http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/1124/4/041009" target="_blank" >10.1088/1742-6596/1124/4/041009</a>
Alternative languages
Result language
angličtina
Original language name
Isolation and optoelectronic characterization of Si solar cells microstructure defects
Original language description
This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.
Czech name
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Czech description
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Classification
Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physics: Conference Series
ISSN
1742-6588
e-ISSN
1742-6596
Volume of the periodical
1124
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
6
Pages from-to
1-6
UT code for WoS article
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EID of the result in the Scopus database
2-s2.0-85060975663