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Isolation and optoelectronic characterization of Si solar cells microstructure defects

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU130447" target="_blank" >RIV/00216305:26220/18:PU130447 - isvavai.cz</a>

  • Result on the web

    <a href="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009" target="_blank" >http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1742-6596/1124/4/041009" target="_blank" >10.1088/1742-6596/1124/4/041009</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Isolation and optoelectronic characterization of Si solar cells microstructure defects

  • Original language description

    This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physics: Conference Series

  • ISSN

    1742-6588

  • e-ISSN

    1742-6596

  • Volume of the periodical

    1124

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    6

  • Pages from-to

    1-6

  • UT code for WoS article

  • EID of the result in the Scopus database

    2-s2.0-85060975663