COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146898" target="_blank" >RIV/00216305:26220/22:PU146898 - isvavai.cz</a>

Result on the web

<a href="https://ntrp.vinca.rs/2022_2/Contents2022_2.html" target="_blank" >https://ntrp.vinca.rs/2022_2/Contents2022_2.html</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2298/NTRP2202128G" target="_blank" >10.2298/NTRP2202128G</a>

Result language

angličtina

Original language name

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Original language description

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nu clear reactors. As such, it is constantly exposed to energetic particles (e. g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359.10(15) cm(-2), 6.740.10(15) cm(-2), and 2.02.10(16) cm(-2). These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10 %. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Addition ally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20305 - Nuclear related engineering; (nuclear physics to be 1.3);

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

NUCL TECHNOL RADIAT

ISSN

1451-3994

e-ISSN

—

Volume of the periodical

37

Issue of the periodical within the volume

2

Country of publishing house

RS - THE REPUBLIC OF SERBIA

Number of pages

10

Pages from-to

128-137

UT code for WoS article

000896021500006

EID of the result in the Scopus database

2-s2.0-85142457236