Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU149497" target="_blank" >RIV/00216305:26220/24:PU149497 - isvavai.cz</a>
Result on the web
<a href="https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf" target="_blank" >https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3762/bjnano.15.18" target="_blank" >10.3762/bjnano.15.18</a>

Result language
angličtina
Original language name
Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate
Original language description
Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in the water-assisted process using so-called Focused Electron Beam Induced Etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low values of electron dose < 8 nC/μm2. We demonstrate that graphene etching and topographical changes in SiO2 substrate can be controlled via electron beam parameters such as dwell time and dose.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
21001 - Nano-materials (production and properties)

Project
<a href="/en/project/EF16_013%2F0001638" target="_blank" >EF16_013/0001638: CVVOZE Power Laboratories - modernization of research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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