Basic characteristics of the a-SiOC:H thin films prepared by PE CVD

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F04%3APU49371" target="_blank" >RIV/00216305:26310/04:PU49371 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/04:00104229 RIV/61389005:_____/04:00105671

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Basic characteristics of the a-SiOC:H thin films prepared by PE CVD

Original language description

Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were prepared by plasma-enhanced chemical vapour deposition (PE CVD) using an RF helical coupling pulsed-plasma system. Films of the thickness ranging from 20 nm to 1.4 ?m were deposited onsilicon wafers from vinyltriethoxysilane (VTES) precursor. The thickness of plasma-polymerized films was measured by a Profilometer Talystep using a defined scratch in the layer as deep as the substrate. The deposition rate was observed with respect to tthe effective power used and the determined dependence could be explained on a basis of the competitive ablation and polymerization mechanisms. Very high deposition rates as far as about 120 nm/min could be reached if proper deposition conditions were tuned. The elemental composition and atomic surface density of thin films were studied by conventional and resonant Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C and O bulk conte

Czech name

Charakterizace a-SiOC:H tenkých vrstev připravených metodou PE CVD

Czech description

Amorfní (a-SiOC:H) tenké vrstvy byly připraveny metodou PECVD za použití RF pulzního plazmatu. Tloušťka vrstev byla v rozsahu 20nm - 1.4um deponovaných z vinyltrietoxysilanu na křemíkovém substrátu. Tloušťka vrsteb byla sledována profilometrem. Byly sledovány vlastnosti vrstev (chemické složení a struktura) s ohledem na efektivní výkon výboje. Morfologie povrchu myla měřena metodou AFM.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Czechoslovak Journal of Physics

ISSN

0011-4626

e-ISSN

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Volume of the periodical

C

Issue of the periodical within the volume

54

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

5

Pages from-to

937-941

UT code for WoS article

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EID of the result in the Scopus database

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