Monomer deficient conditions used to control physical properties of plasma polymer films in wide ranges by RF power
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F14%3APU113720" target="_blank" >RIV/00216305:26310/14:PU113720 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Monomer deficient conditions used to control physical properties of plasma polymer films in wide ranges by RF power
Original language description
We found out that the monomer deficient conditions enable to control mechanical and optical properties of plasma polymer films by RF power using plasma-enhanced chemical vapor deposition. The monomer deficient conditions may be characterized by the plasma process pressure (plasma switched on) lower than the basic process pressure (plasma switched off), which means that the concentration of reactive species is not insignificant or is even comparable with the concentration of monomer molecules. The monomer deficient conditions are achieved at lower monomer flow rates (0.5-10 sccm) operated at lower basic process pressures (1-5 Pa). In this study, we plasma polymerized tetravinylsilane at a mass flow rate of 3.8sccm operated at a basic process pressure of3.0 Pa, and RF power ranging 10-70 W using continuous wave. The plasma process pressure decreased from 1.7 Pa (10 W) to 1.1 Pa (70 W) at enhanced power. The plasma species were monitored by mass spectrometry and correlated with chemical
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
—
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů