How Xe and Ga FIB differ in inducing lateral damage on TEM samples
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F15%3APU128836" target="_blank" >RIV/00216305:26620/15:PU128836 - isvavai.cz</a>
Alternative codes found
RIV/01733214:_____/15:00000007
Result on the web
<a href="http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1" target="_blank" >http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
How Xe and Ga FIB differ in inducing lateral damage on TEM samples
Original language description
Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)
Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS
ISBN
978-1-62708-102-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
65-70
Publisher name
Neuveden
Place of publication
Neuveden
Event location
Portland, OR
Event date
Nov 1, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000377554900013