How Xe and Ga FIB differ in inducing lateral damage on TEM samples
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F01733214%3A_____%2F15%3A00000007" target="_blank" >RIV/01733214:_____/15:00000007 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26620/15:PU128836
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
How Xe and Ga FIB differ in inducing lateral damage on TEM samples
Original language description
Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.
Data specific for result type
Article name in the collection
ISTFA 2015: Proceedings of the 41st International Symposium for Testing and Failure Analysis
ISBN
9781627081023
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
60-65
Publisher name
ASM International
Place of publication
Portland
Event location
Portland
Event date
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Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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