Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU128833" target="_blank" >RIV/00216305:26620/17:PU128833 - isvavai.cz</a>
Result on the web
<a href="https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797" target="_blank" >https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1017/S1431927617000241" target="_blank" >10.1017/S1431927617000241</a>
Alternative languages
Result language
angličtina
Original language name
Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device
Original language description
We report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MICROSCOPY AND MICROANALYSIS
ISSN
1431-9276
e-ISSN
1435-8115
Volume of the periodical
23
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
484-490
UT code for WoS article
000407562200004
EID of the result in the Scopus database
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