Aluminum nitride based piezoelectric harvesters
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU137887" target="_blank" >RIV/00216305:26620/19:PU137887 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Aluminum nitride based piezoelectric harvesters
Original language description
This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20704 - Energy and fuels
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings
ISBN
978-1-7281-5638-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
IEEE
Place of publication
NEW YORK
Event location
Krakow
Event date
Dec 2, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000576757900079