Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F26%3A0200721" target="_blank" >RIV/00216305:26620/26:0200721 - isvavai.cz</a>

Result on the web

<a href="https://www.nature.com/articles/s43246-025-01020-w" target="_blank" >https://www.nature.com/articles/s43246-025-01020-w</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s43246-025-01020-w" target="_blank" >10.1038/s43246-025-01020-w</a>

Result language

angličtina

Original language name

Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability

Original language description

The integration of high-quality, ultrathin van der Waals (vdW) dielectrics with 2D semiconductors remains a critical bottleneck in the development of reliable, ultra-scaled field-effect transistors (FETs). Here, we report a comprehensive study of MoS2-based FETs employing layered rhombohedral MnAl2S4 as the gate insulator, a previously unexplored vdW dielectric that can be isolated down to the monolayer limit. Devices fabricated in both top-gated (TG) and bottom-gated (BT) configurations exhibit excellent electrical performance, featuring low gate leakage, minimal hysteresis ( < 2 mV) under high electric fields up to 11 MV cm(-1) across a wide range of gate voltage sweep rates (0.001-10 Vs(-1)). We observed a consistent counterclockwise hysteresis and an anomalous bias temperature instability (BTI), possibly caused by the diffusion of Mn interstitials and S vacancies formed inside the MnAl2S4 film during growth. Notably, we show that threshold voltage degradation at high temperatures was observed to be negligible, and hysteresis dynamics and very small BTI are reproducible over a long time, demonstrating the high reliability of our devices. In addition, the vdW interface between MnAl2S4 and MoS2 in our device is of good quality and is expected to provide a small density of insulator defects, a promising gate dielectric for reliable 2D devices.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2026

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Communications Materials

ISSN

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e-ISSN

2662-4443

Volume of the periodical

7

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

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UT code for WoS article

001658758800001

EID of the result in the Scopus database

2-s2.0-105026986337