Gettering techniques for SOI wafers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F15%3A%230000095" target="_blank" >RIV/26821532:_____/15:#0000095 - isvavai.cz</a>
Result on the web
<a href="http://dms.fzu.cz/" target="_blank" >http://dms.fzu.cz/</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Gettering techniques for SOI wafers
Original language description
The SOI concept allows making the electronic devices and integrated circuits smaller, faster, and more powerful. On the other hand, solution of heat dissipation or impurity gettering is more complicated than for standard silicon wafers. The presence of the buried oxide layer prevents diffusion of contaminants from the device layer to the bulk of the handle wafer and to the wafer backside. The gettering sinks are therefore preferentially placed between the buried oxide and the device layer or on the topof the device layer. However, the close proximity of the gettering sinks to the devices induces some restrictions and requirements to the gettering techniques used. The solution may vary for thin and thick SOI. The overview of the gettering techniques used for SOI wafers will be presented and the need for novel solutions will be discussed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JJ - Other materials
OECD FORD branch
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Result continuities
Project
<a href="/en/project/TH01010419" target="_blank" >TH01010419: Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
DEVELOPMENT OF MATERIALS SCIENCE IN RESEARCH AND EDUCATION - BOOK OF ABSTRACTS OF THE 25th JOINT SEMINAR
ISBN
978-80-89597-28-4
ISSN
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e-ISSN
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Number of pages
66
Pages from-to
30
Publisher name
Slovak Expert Group of Solid State Chemistry and Physics
Place of publication
Kezmarske Zlaby (SK)
Event location
Kezmarske Zlaby (SK)
Event date
Aug 31, 2015
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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