AFM Study of Al2O3 Thin Films Prepared by Plasma Oxidation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13430%2F00%3A00000561" target="_blank" >RIV/44555601:13430/00:00000561 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

AFM Study of Al2O3 Thin Films Prepared by Plasma Oxidation

Original language description

The surface structure features of Al2O3 thin films, which were prepared by plasma oxidation of aluminium thin films, were observed using atomic force microscopy (AFM). The alumina thin films were prepared at different sample bias voltages for demonstration of the preparation condition influence. It was found that the value of sample bias voltage plays an indispensable role for surface structure of the alumina film. Structural properties of the Al2O3 films could be affected during preparation due to plasma particle bombardment. The thickness of Al, Al-Al2O3, and Al-Al2O3-Al structures was derived from the AFM images of surfaces with a mechanical scratch.

Czech name

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Czech description

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Type

A - Audiovisual production

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2000

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Place of publication

Nancy

Publisher/client name

Société Francaise du Vide

Version

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Carrier ID

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