The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13430%2F01%3A00001437" target="_blank" >RIV/44555601:13430/01:00001437 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films
Original language description
Plasma oxidation, utilising highly activated oxygen or oxygen/argon plasma, is one of the low temperature technigues used to grow of dielectric films on metal and semiconductor surfaces. The paper deals with a comparative study of plasma characteristicsand thin Al2O3 and SnO2 films surface properties. The surface structure of oxide films was studied by Atomic Force Microscopy (AFM).
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings XXV ICPIG - International Conference on Phenomena in Ionized Gases
ISBN
4-9900915-1-5
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
167-168
Publisher name
Nagoya University
Place of publication
Nagoya, JAPAN
Event location
Nagoya
Event date
Jul 17, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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