Plasma Oxidation of Thin Metal Films - Experiment and Modelling

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13430%2F02%3A00001952" target="_blank" >RIV/44555601:13430/02:00001952 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Plasma Oxidation of Thin Metal Films - Experiment and Modelling
Original language description
Plasma oxidation, utilising oxygen or oxygen/argon plasma, is one of the low temperature techniques used to grow of dielectric films on metal and semiconductor surfaces. In this work, we have studied surface properties of Al2O3 and SnO2 thin films prepared by plasma oxidation. The oxidPe surface structure was measured by Atomic Force Microscopy (AFM). The composition, thickness and stoichiometry of oxide films were measured by Rutherford Backscattering Spectrometry (RBS). The experimental techniques arecombined with computer experiment, which was used in order to discuss the importance of various physical and chemical processes taking part during the plasma oxidation of metals. This computer experiment consists of set of models following various stages of real experiment.
Czech name
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Czech description
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Project
<a href="/en/project/OC%20527.50" target="_blank" >OC 527.50: Polymer Thin Films Study by AFM and Improvement of Plasma Diagnostics Methods</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Conference Proceedings of Joint Conference ESCAMPIG 16
ISBN
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ISSN
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e-ISSN
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Number of pages
2
Pages from-to
351-352
Publisher name
Centre national de la recherche scientifique
Place of publication
Grenoble, Francie
Event location
Grenoble, Francie
Event date
Jul 14, 2002
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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