The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49610040%3A_____%2F04%3A00000004" target="_blank" >RIV/49610040:_____/04:00000004 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/04:00107340 RIV/49610040:_____/05:00000032

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Original language description

Silicon thin films grown near the boundary between the amorphous/microcrystalline growth offer superior properties for industrial applications. Series of silicon samples, in which crossing of this transition region was achieved by changing a single techn(dilution of silane in hydrogen, deposition temperature, sample thickness) were used to test our model of transport, connecting the macroscopically observed transport properties and the crystallinity, hydrogen content, grain size and grain boundaries. Microscopic study by AFM led to the formulation of the geometrical model of growth of mixed phase Si. The demand for research of microcrystalline or polycrystalline silicon prepared at low substrate temperatures is stimulated by the use of cheap plastic Inaddition to a direct deposition an alternative technology, such as metal-induced crystallization supported by the electric field is discussed. Possible future application of thin silicon films, for example in a nanolithography, is also s

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

physica status solidi (c)

ISSN

1610-1634

e-ISSN

—

Volume of the periodical

Volume 1

Issue of the periodical within the volume

Issue 5

Country of publishing house

DE - GERMANY

Number of pages

18

Pages from-to

1097-1114

UT code for WoS article

—

EID of the result in the Scopus database

—