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The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49610040%3A_____%2F04%3A00000004" target="_blank" >RIV/49610040:_____/04:00000004 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/04:00107340 RIV/49610040:_____/05:00000032

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

  • Original language description

    Silicon thin films grown near the boundary between the amorphous/microcrystalline growth offer superior properties for industrial applications. Series of silicon samples, in which crossing of this transition region was achieved by changing a single techn(dilution of silane in hydrogen, deposition temperature, sample thickness) were used to test our model of transport, connecting the macroscopically observed transport properties and the crystallinity, hydrogen content, grain size and grain boundaries. Microscopic study by AFM led to the formulation of the geometrical model of growth of mixed phase Si. The demand for research of microcrystalline or polycrystalline silicon prepared at low substrate temperatures is stimulated by the use of cheap plastic Inaddition to a direct deposition an alternative technology, such as metal-induced crystallization supported by the electric field is discussed. Possible future application of thin silicon films, for example in a nanolithography, is also s

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    physica status solidi (c)

  • ISSN

    1610-1634

  • e-ISSN

  • Volume of the periodical

    Volume 1

  • Issue of the periodical within the volume

    Issue 5

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    18

  • Pages from-to

    1097-1114

  • UT code for WoS article

  • EID of the result in the Scopus database