Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23210%2F11%3A43895751" target="_blank" >RIV/49777513:23210/11:43895751 - isvavai.cz</a>

Alternative codes found

RIV/49777513:23640/11:43895751

Result on the web

<a href="http://dx.doi.org/10.2478/s11534-011-0041-4" target="_blank" >http://dx.doi.org/10.2478/s11534-011-0041-4</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/s11534-011-0041-4" target="_blank" >10.2478/s11534-011-0041-4</a>

Result language

angličtina

Original language name

Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films

Original language description

The effect of deposition temperature on the structural and optical properties of amorphous hydrogenated silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen was under study. The series of thin films deposited at the deposition temperatures of 50?200°C were inspected by XRD, Raman spectroscopy and UV Vis spectrophotometry. All samples were found to be amorphous with no presence of the crystalline phase. Ordered silicon hydride regions were proved by XRD. Raman measurement analysis substantiated the results received from XRD showing that with increasing deposition temperature silicon-silicon bond-angle fluctuation decreases. The optical characterization based on transmittance spectra in the visible region presented that the refractive index exhibits upward trend with increasing deposition temperature, which can be caused by the densification of the amorphous network.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

CENTRAL EUROPEAN JOURNAL OF PHYSICS

ISSN

1895-1082

e-ISSN

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Volume of the periodical

9

Issue of the periodical within the volume

5

Country of publishing house

DE - GERMANY

Number of pages

7

Pages from-to

1301-1308

UT code for WoS article

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EID of the result in the Scopus database

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