Structural changes studies of a-Si:H films deposited by PECVD under different hydrogen dilutions using various experimental techniques

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F09%3A00502097" target="_blank" >RIV/49777513:23640/09:00502097 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Structural changes studies of a-Si:H films deposited by PECVD under different hydrogen dilutions using various experimental techniques

Original language description

Plasma enhanced chemical vapour deposition (PECVD) has been used to prepare hydrogenated amorphous silicon (a-Si:H) thin films at different hydrogen dilution of silane source gas. The films were deposited on Corning glass 1737 substrate and on (100) oriented c-Si wafers and characterized by XRD diffraction, micro-Raman and FTIR spectrometry. Experimental data show evolution from amorphous to nanocrystalline silicon and contain the medium-range order (MRO) with varying hydrogen dilution during deposition. From X-ray diffraction and Raman analysis, it is found that the presence of crystalline phase depends on the kind of substrate and on the dilution scale.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/1M06031" target="_blank" >1M06031: Materials and components for environment protection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

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Volume of the periodical

84

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

3

Pages from-to

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UT code for WoS article

000270625900031

EID of the result in the Scopus database

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