Comparison of the surface properties of power electronic substrates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F15%3A43925339" target="_blank" >RIV/49777513:23220/15:43925339 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7247979&newsearch=true&queryText=Comparison%20of%20the%20surface%20properties%20of%20power%20electronic%20substrates" target="_blank" >http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7247979&newsearch=true&queryText=Comparison%20of%20the%20surface%20properties%20of%20power%20electronic%20substrates</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE.2015.7247979" target="_blank" >10.1109/ISSE.2015.7247979</a>

Result language
angličtina
Original language name
Comparison of the surface properties of power electronic substrates
Original language description
This paper deals with thick film copper technology (TFC) and its comparison with other power electronic substrates such as a printed silver or direct bonded copper (DBC) on alumina substrates. The research activities were concentrated on surface properties of power substrates and its solderability. The solderability of thick film copper is comparable with other power electronic substrates such as DBC, but it is necessary to ensure proper firing condition or remove oxides from the surface after firing and use a proper flux. The main advantages of thick film copper in comparison with common power electronic substrates are a high resolution of conductive pattern, higher reliability at thermal cycling and a possibility to create a different local thicknessof copper layer on substrate. Maximal thickness of copper layer can reach 300 ?m.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 2015 38th International Spring Seminar on Electronics Technology (ISSE 2015)
ISBN
978-1-4799-8860-0
ISSN
2161-2528
e-ISSN
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Number of pages
5
Pages from-to
1-5
Publisher name
IEEE
Place of publication
Piscataway
Event location
Eger, Maďarsko
Event date
May 6, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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