High-temperature behavior of Ta-Si-N thin films with a high content of Si

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F03%3A00000136" target="_blank" >RIV/49777513:23520/03:00000136 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

High-temperature behavior of Ta-Si-N thin films with a high content of Si

Original language description

Ta-Si-N films are used as diffusion barriers between Cu and Si in VLSI technology because they are amorphous and exhibit a good thermal stability. Due to good mechanical properties and a high oxidation resistance, the Ta-Si-N films are also used as pro tective coatings. Si stabilizes an amorphous structure in the film, improves its mechanical properties, such as hardness and adhesion strength.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

<a href="/en/project/ME%20529" target="_blank" >ME 529: Nanostructured thin films</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

JUNIORMAT '03

ISBN

80-214-2462-1

ISSN

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e-ISSN

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Number of pages

2

Pages from-to

60-61

Publisher name

University of Technology

Place of publication

Brno

Event location

Brno

Event date

Sep 23, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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