Thermal annealing of sputtered Al-Si-Cu-N films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F03%3A00000139" target="_blank" >RIV/49777513:23520/03:00000139 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Thermal annealing of sputtered Al-Si-Cu-N films

Original language description

This article reports on stress, structure and thermal stability of Al-Si-Cu-N films prepared by DC reactive magnetron sputtering. The films were deposited under the following conditions: discharge current Id=1A, substrate bias Us=-100V, substrate ion current density is=0,6 and 0,9mA/cm2, substrate temperature Ts=300 deg.C and 500 deg.C, substrate-to-target distance ds-t=60 mm, partial pressure of nitrogen pN2 ranging from 0,06 to 0,14Pa and constanttotal pressure pT=pAr+pN2=0,5 Pa.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

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Volume of the periodical

72

Issue of the periodical within the volume

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Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

21-28

UT code for WoS article

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EID of the result in the Scopus database

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