Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F03%3A00000234" target="_blank" >RIV/49777513:23520/03:00000234 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si
Original language description
This article reports on ternary Ta-Si-N films with a high content of Si sputtered from an alloyed TaSi2 target using an unbalanced dc magnetron. The films were deposited under the following conditions: magnetron discharge current Id=1 and 2A, negative substrate bias Us, ranging from Ufl to -500V, substrate ion current density is=0.5 and 1mA/cm2, substrate temperature Ts ranging from 200 to 1000oC, substrate-to-terget distance ds-t=60mm, partial pressure of nitrogen pN2 ranging from 0 to 0.7 Pa and twovalues of a total pressure pT=PAr+pN2=0.5 and 0.7 Pa.
Czech name
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Czech description
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Project
<a href="/en/project/ME%20529" target="_blank" >ME 529: Nanostructured thin films</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Workshop on Designing Interfacial Structures in Advanced Materials and their Joints
ISBN
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ISSN
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e-ISSN
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Number of pages
7
Pages from-to
51-57
Publisher name
University of Vienna
Place of publication
Vienna
Event location
Vienna
Event date
Jul 13, 2003
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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