Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F10%3A00503542" target="_blank" >RIV/49777513:23520/10:00503542 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
Original language description
Thermal stability of deposited Si-B-C-N materials (film fragments or powders without a substrate) in inert gases (He and Ar) up to 1700 °C was investigated using differential scanning calorimetry, high-resolution thermogravimetry and X-ray diffraction measurements. Amorphous Si-B-C-N films were fabricated by dc magnetron co-sputtering of a single B4C-Si target in two nitrogen-argon gas mixtures (50% N2 + 50% Ar or 25% N2 + 75% Ar). It was found that the deposited Si-B-C-N materials can be more stable athigh temperatures in the inert atmosphere than the usually used substrates (e.g. SiC or BN). The materials with the compositions (in at.%) Si32-33B10C2N50-51, for which N/(Si+B+C)=1.1-1.2, retained their amorphous structure up to 1600 °C without any structural transformations and detectable mass changes.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
519
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
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UT code for WoS article
000283955200054
EID of the result in the Scopus database
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