High-Rate Reactive Deposition of Transparent Zirconium Dioxide Films Using High-Power Pulsed DC Magnetron Sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F11%3A43895686" target="_blank" >RIV/49777513:23520/11:43895686 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
High-Rate Reactive Deposition of Transparent Zirconium Dioxide Films Using High-Power Pulsed DC Magnetron Sputtering
Original language description
High-power pulsed dc magnetron sputtering with an effective reactive gas flow control, developed by us, was used for the reactive deposition of transparent zirconium dioxide films. The depositions were performed using a strongly unbalanced magnetron witha planar zirconium target of 100 mm diameter in argon-oxygen gas mixtures at the argon pressure of 2 Pa. The repetition frequency was 500 Hz at duty cycles ranging from 2.5% to 10%. The substrate temperatures were less than 300 degrees of Celsius duringthe depositions of films on a floating substrate at the distance of 100 mm from the target. The increase in the average target power density from 5 to 100 watts per square centimeter in a period at the same duty cycle of 10% resulted in a rapid rise inthe deposition rate from 11 nm/min to 73 nm/min.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
<a href="/en/project/OC10045" target="_blank" >OC10045: Novel plasma sources for film deposition and surface modification</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů