Effect of ion bombarding energies on photocatalytic TiO2 films growing in a pulsed dual magnetron discharge

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F11%3A43898484" target="_blank" >RIV/49777513:23520/11:43898484 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1116/1.3563612" target="_blank" >http://dx.doi.org/10.1116/1.3563612</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.3563612" target="_blank" >10.1116/1.3563612</a>

Result language
angličtina
Original language name
Effect of ion bombarding energies on photocatalytic TiO2 films growing in a pulsed dual magnetron discharge
Original language description
Photocatalytic crystalline TiO2 films were deposited by a pulsed dc dual magnetron system. The depositions were performed using two unbalanced magnetrons with planar titanium targets of 50 mm diameter in Ar+O2 gas mixtures at a total pressure of 0.9 Pa and with the maximum substrate surface temperature of 160 °C. Both magnetrons operated in the asymmetric bipolar pulsed mode. Time-averaged energy-resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. The measured structure of the ion energy distributions was correlated with the distinct pulse phases of the magnetron discharges. A decrease in the energy delivered by fast ions to the unit volume of the growing films resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO2 films.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
<a href="/en/project/OC10045" target="_blank" >OC10045: Novel plasma sources for film deposition and surface modification</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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