Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F13%3A43918481" target="_blank" >RIV/49777513:23520/13:43918481 - isvavai.cz</a>
Result on the web
<a href="http://stacks.iop.org/JPhysD/46/205205" target="_blank" >http://stacks.iop.org/JPhysD/46/205205</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0022-3727/46/20/205205" target="_blank" >10.1088/0022-3727/46/20/205205</a>

Result language
angličtina
Original language name
Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux
Original language description
We systematically investigate and quantify different physical phenomena influencing the deposition rate, aD, of Nb coatings prepared by high power impulse magnetron sputtering (HiPIMS), and propose a straightforward approach for deposition rate enhancement through the control of the magnetron's magnetic field. The magnetic field strength at the target surface, B, of a 50 mm diameter magnetron was controlled by the application of paramagnetic spacers with different thicknesses in between the magnetron surface and the target. We found that lowering B achieved by the application of a 2.8 mm thick spacer led to an increase in aD by a factor of ~4.5 (from 10.6 to 45.2 nm/min) when the discharge was operated at a fixed average pulse target power density (2.5kW/cm2). However, the ionized fraction of the deposition flux onto the substrate was found to be comparable, despite a large difference in B-dependent discharge characteristics (magnetron voltage and discharge current). We show that the
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
—

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)