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Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43932161" target="_blank" >RIV/49777513:23520/17:43932161 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4996186" target="_blank" >http://dx.doi.org/10.1063/1.4996186</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4996186" target="_blank" >10.1063/1.4996186</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study

  • Original language description

    A time-dependent parametric model was applied to controlled reactive high-power impulse magnetron sputtering (HiPIMS) depositions of stoichiometric ZrO2 films, carried out in our laboratories, (i) to clarify the complicated dynamics of the processes on the target and substrate surfaces during voltage pulses, and (ii) to corroborate the importance of the O2 inlet configuration (position and direction) which strongly affects the O2 dissociation in the discharge and the chemisorption flux of oxygen atoms and molecules onto the substrate. For the experimental conditions with the to-substrate O2 inlets, the deposition-averaged target power density of 50 W/cm^2, and the oxygen partial pressure of 0.05 Pa (being close to the mean value during controlled depositions), our model predicts a low compound fraction, changing between 8% and 12%, in the target surface layer at an almost constant high compound fraction, changing between 92% and 93%, in the substrate surface layer during the pulse period (2000 μs). The calculated deposition rate of 89 nm/min for these films is in good agreement with the measured value of 80 nm/min achieved for optically transparent stoichiometric ZrO2 films prepared under these conditions.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10305 - Fluids and plasma physics (including surface physics)

Result continuities

  • Project

    <a href="/en/project/GJ15-00859Y" target="_blank" >GJ15-00859Y: Design of new functional materials, and pathways for their atom-by-atom preparation, using advanced computer modelling</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    122

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    „043304-1“-„043304-9“

  • UT code for WoS article

    000409414100022

  • EID of the result in the Scopus database

    2-s2.0-85026547567