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Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43932218" target="_blank" >RIV/49777513:23520/17:43932218 - isvavai.cz</a>

  • Result on the web

    <a href="http://doi.org/10.1088/1361-6463/aa8356" target="_blank" >http://doi.org/10.1088/1361-6463/aa8356</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/1361-6463/aa8356" target="_blank" >10.1088/1361-6463/aa8356</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

  • Original language description

    Reactive high-power impulse magnetron sputtering (HiPIMS) with a pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputtered vanadium target was used for low-temperature (300 °C) deposition of VO2 films with a pronounced semiconductor-to-metal transition onto conventional soda-lime glass substrates without any substrate bias voltage and without any interlayer. The deposition-averaged target power density was close to 13 W/cm^2 at a fixed duty cycle of 1% with a peak target power density up to 5 kW/cm^2 during voltage pulses ranged from 40 µs to 100 µs. A high modulation of the transmittance at 2500 nm (between 51% and 8% at the film thickness of 88 nm) and the electrical resistivity (changed 350 times) at the transition temperature of 56–57 °C was achieved for the VO2 films synthesized using 50 µs voltage pulses when the crystallization of the thermochromic VO2(M1) phase was supported by the high-energy (up to 50 eV relative to ground potential) ions.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

    <a href="/en/project/GA17-08944S" target="_blank" >GA17-08944S: Nanostructured coatings synthesized using highly reactive pulsed plasmas</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    JOURNAL OF PHYSICS D-APPLIED PHYSICS

  • ISSN

    0022-3727

  • e-ISSN

  • Volume of the periodical

    50

  • Issue of the periodical within the volume

    38

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    6

  • Pages from-to

    „38LT01-1“-„38LT01-6“

  • UT code for WoS article

    000408747400001

  • EID of the result in the Scopus database

    2-s2.0-85028923959