Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43932218" target="_blank" >RIV/49777513:23520/17:43932218 - isvavai.cz</a>
Result on the web
<a href="http://doi.org/10.1088/1361-6463/aa8356" target="_blank" >http://doi.org/10.1088/1361-6463/aa8356</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/aa8356" target="_blank" >10.1088/1361-6463/aa8356</a>
Alternative languages
Result language
angličtina
Original language name
Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition
Original language description
Reactive high-power impulse magnetron sputtering (HiPIMS) with a pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputtered vanadium target was used for low-temperature (300 °C) deposition of VO2 films with a pronounced semiconductor-to-metal transition onto conventional soda-lime glass substrates without any substrate bias voltage and without any interlayer. The deposition-averaged target power density was close to 13 W/cm^2 at a fixed duty cycle of 1% with a peak target power density up to 5 kW/cm^2 during voltage pulses ranged from 40 µs to 100 µs. A high modulation of the transmittance at 2500 nm (between 51% and 8% at the film thickness of 88 nm) and the electrical resistivity (changed 350 times) at the transition temperature of 56–57 °C was achieved for the VO2 films synthesized using 50 µs voltage pulses when the crystallization of the thermochromic VO2(M1) phase was supported by the high-energy (up to 50 eV relative to ground potential) ions.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/GA17-08944S" target="_blank" >GA17-08944S: Nanostructured coatings synthesized using highly reactive pulsed plasmas</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN
0022-3727
e-ISSN
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Volume of the periodical
50
Issue of the periodical within the volume
38
Country of publishing house
GB - UNITED KINGDOM
Number of pages
6
Pages from-to
„38LT01-1“-„38LT01-6“
UT code for WoS article
000408747400001
EID of the result in the Scopus database
2-s2.0-85028923959