Ion and atom fluxes during HiPIMS deposition of NbC from a compound target

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F23%3A43969229" target="_blank" >RIV/49777513:23520/23:43969229 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Ion and atom fluxes during HiPIMS deposition of NbC from a compound target
Original language description
Sputtered element ratio (Nb/C) in films deposited from a compound NbC target by non-reactive high power impulse magnetron sputtering (HiPIMS) operated at different frequencies and duty cycles have been investigated. Time-averaged mass spectrometry shows that the fluxes of sputtered target ions increase with increasing pulse power density (and decreasing pulse length) due to increasing the electron density and, hence, electron-impact ionization probability. Since Nb atoms have lower ionization energy and larger ionization cross-section than C atoms, the Nb ions dominate the flux of ions onto the film at all conditions. Neutrals were monitored by optical emission spectroscopy (OES) and showed a decrease by increasing pulse power density. In the case of 500 Hz, the Nb/C ratio varied from 0.6 to 0.95 by adjusting the length of HiPIMS pulses between 200 μs and 30 μs, achieving nearly stoichiometric composition for the lowest pulse length.
Czech name
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Czech description
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Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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