Understanding the ion and atom fluxes during HiPIMS deposition of NbC from a compound target

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F23%3A43970250" target="_blank" >RIV/49777513:23520/23:43970250 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Understanding the ion and atom fluxes during HiPIMS deposition of NbC from a compound target
Original language description
This study focuses on understanding the plasma processes leading to the transition from C-rich to stoichiometric NbC films. To study the processes, time-averaged mass spectroscopy, spatial-resolved optical emission spectroscopy (OES), and plasma modelling were used to estimate fluxes of Nb and C atoms and ions at various positions within the discharge plasma. Our findings indicate that even at low power densities, the density of Nb ions remains significant, primarily due to their lower ionization energy and larger ionization cross-section compared to C atoms. However, the film growth is driven by the flux of neutral carbon, resulting in excess free carbon in the deposited film. Increasing the pulse power density, and higher ionization efficiencies lead to greater C ionization; however, neutral C still dominates the flux of C species to the film. Ionized C is affected by the back-attraction effect, and neutral C might also be increasingly affected by scattering with Nb. Consequently, this results in the deposition of nearly stoichiometric films using the highest pulse power density and shortest pulse length.
Czech name
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Czech description
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Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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