Plasma diagnostics and modelling of NbC sputtering and deposition in HiPIMS discharges

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43972844" target="_blank" >RIV/49777513:23520/24:43972844 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Plasma diagnostics and modelling of NbC sputtering and deposition in HiPIMS discharges
Original language description
This presentation focuses on explaining the observed change in the composition of NbC films ranging from C-rich to stoichiometric, corresponding to an increase in the pulse-averaged power density. The Nb and C atoms sputtered from the target are under the influence of multiple processes that together affect their transport towards the substrate (sputtering, scattering off the process gas atoms, ionization in the high-density plasma and return of ions onto the target or loss of ions to chamber walls). Plasma diagnostics (mass spectroscopy and optical emission spectroscopy) and plasma modelling are used to evaluate the ratios of Nb and C neutral and ionic species near the target and at the substrate position. Moreover, a newly developed particle-based Monte Carlo simulation is used to analyse in detail the transport of Ar, Nb and C species in the HiPIMS discharge.
Czech name
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Czech description
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Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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