Simulating the transport of atoms during HiPIMS deposition of NbC from a compound target
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43972643" target="_blank" >RIV/49777513:23520/24:43972643 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Simulating the transport of atoms during HiPIMS deposition of NbC from a compound target
Original language description
This presentation focuses on explaining the observed change in the composition of NbC films deposited by HiPIMS from a single compound target for varying pulse-average target power density. We employ computer simulations based on an in-house DSMC code which enables to simulate the transport of atoms and ions and their mutual collisions in the discharge. The simulation is fully three-dimensional and is constrained by target voltage and current waveforms which ensures good compliance with experimental discharge conditions. We calculate the degree of ionization of Nb and C above the target, the rates of C and Nb collisions in the discharge plasma and estimate the flux and energy of backscattered Ar atoms onto the substrate. We correlate these simulation results with the experimentally observed trend in film composition.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů